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NTP45N06L Технические параметры

ON Semiconductor  NTP45N06L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 45A Ta
Drive Voltage (Max Rds On, Min Rds On) 5V
Number of Elements 1 Element
Power Dissipation (Max) 2.4W Ta 125W Tj
Turn Off Delay Time 36 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Lead (Sn80Pb20)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Voltage - Rated DC 60V
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 45A
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 22.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 341ns
Vgs (Max) ±15V
Fall Time (Typ) 158 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 240 mJ
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

NTP45N06L Документы

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