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NTQD6968NR2G Технические параметры

ON Semiconductor  NTQD6968NR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 60 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 20V
Max Power Dissipation 1.39W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Current Rating 7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.81W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 25ns
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free

NTQD6968NR2G Документы

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