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NTR3C21NZT1G Технические параметры

ON Semiconductor  NTR3C21NZT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.6A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 470mW Ta
Turn Off Delay Time 420 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature ULTRA LOW RESISTANCE
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1540pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 17.8nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Fall Time (Typ) 4.67 μs
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.024Ohm
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTR3C21NZT1G Документы

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