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NTR4101PT1G Технические параметры

ON Semiconductor  NTR4101PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.8A Ta
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 420mW Ta
Turn Off Delay Time 30.2 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 70MOhm
Voltage - Rated DC -20V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating -3.2A
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730mW
Turn On Delay Time 7.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 12.6ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Fall Time (Typ) 12.6 ns
Continuous Drain Current (ID) -3.2A
Threshold Voltage -720mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -720 mV
Height 940μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTR4101PT1G Документы

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