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NTR4502PT1G Технические параметры

ON Semiconductor  NTR4502PT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 13 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.13A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 400mW Tj
Turn Off Delay Time 19 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 155MOhm
Voltage - Rated DC -30V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -1.95A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 5.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 1.95A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -3 V
Height 1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTR4502PT1G Документы

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