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NTSB20100CT-1G Технические параметры
ON Semiconductor NTSB20100CT-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Tube | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -40°C | |
| Applications | EFFICIENCY | |
| Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.10.00.80 | |
| Terminal Position | SINGLE | |
| Base Part Number | NTST20100CT | |
| Pin Count | 3 | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 800μA @ 100V | |
| Voltage - Forward (Vf) (Max) @ If | 830mV @ 10A | |
| Forward Current | 20A | |
| Operating Temperature - Junction | -40°C~150°C | |
| Max Reverse Voltage (DC) | 100V | |
| Average Rectified Current | 10A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 800μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 100V | |
| Peak Non-Repetitive Surge Current | 150A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 150A | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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