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NTZD3155CT1H Технические параметры

ON Semiconductor  NTZD3155CT1H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6Pins
Weight 8.193012mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 540mA 430mA
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Form FLAT
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.55Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant

NTZD3155CT1H Документы

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