Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NUS5530MNR2G Технические параметры
ON Semiconductor NUS5530MNR2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Number of Elements | 1 Element | |
| Voltage Rated | 35V PNP 20V P-Channel | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Applications | General Purpose | |
| Current Rating (Amps) | 2A PNP 3.9A P-Channel | |
| Max Power Dissipation | 2.5W | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 3.9A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | NUS5530MN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 8 | |
| Rise Time-Max | 55ns | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 635mW | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | NPN, P-Channel | |
| Collector Emitter Voltage (VCEO) | 35V | |
| Max Collector Current | 2A | |
| Continuous Drain Current (ID) | -3.9A | |
| Gate to Source Voltage (Vgs) | -35V | |
| Max Frequency | 100MHz | |
| Pulsed Drain Current-Max (IDM) | 20A | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Collector Base Voltage (VCBO) | -55V | |
| Emitter Base Voltage (VEBO) | -5V | |
| DC Current Gain-Min (hFE) | 100 | |
| Drain to Source Resistance | 200Ohm | |
| VCEsat-Max | 0.3 V | |
| Fall Time-Max (tf) | 70ns | |
| Height | 950μm | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
NUS5530MNR2G Документы
- DatasheetsNUS5530MN
- Environmental InformationMaterial Declaration NUS5530MNR2G
- PCN Assembly/OriginDFN Pkg Filters 18/Jun/2013
- PCN PackagingCovering Tape/Material Chg 20/May/2016
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ