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NV25512MUW3VTBG Технические параметры

ON Semiconductor  NV25512MUW3VTBG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 8-UFDFN Exposed Pad
Surface Mount YES
Memory Types Non-Volatile
Usage Level Automotive grade
Operating Temperature -40°C~125°C TA
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q100
Published 2015
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Supply 1.8V~5.5V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Свойство продукта Значение свойства
Supply Voltage 5V
Terminal Pitch 0.5mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 5.5V
Supply Voltage-Min (Vsup) 2.5V
Memory Size 512Kb 64K x 8
Operating Mode SYNCHRONOUS
Clock Frequency 10MHz
Access Time 45ns
Memory Format EEPROM
Memory Interface SPI
Organization 64KX8
Memory Width 8
Write Cycle Time - Word, Page 5ms
Memory Density 524288 bit
Parallel/Serial SERIAL
Programming Voltage 5V
Write Cycle Time-Max (tWC) 4ms
Length 3mm
Height Seated (Max) 0.55mm
Width 2mm
RoHS Status RoHS Compliant

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