[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NVB5860NLT4G Технические параметры

ON Semiconductor  NVB5860NLT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 25 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 220A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 283W Tc
Turn Off Delay Time 98 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 283W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13216pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 220A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 660A
Height 4.83mm
Length 10.29mm
Width 9.65mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NVB5860NLT4G Документы

NVB5860NLT4G brand manufacturers: ON Semiconductor, Anli stock, NVB5860NLT4G reference price.ON Semiconductor. NVB5860NLT4G parameters, NVB5860NLT4G Datasheet PDF and pin diagram description download.You can use the NVB5860NLT4G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NVB5860NLT4G pin diagram and circuit diagram and usage method of function,NVB5860NLT4G electronics tutorials.You can download from the Anli.