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NVB60N06T4G Технические параметры
ON Semiconductor NVB60N06T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) | |
| Factory Lead Time | 25 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 60A Ta | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 2.4W Ta 150W Tj | |
| Turn Off Delay Time | 94.5 ns | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| HTS Code | 8541.29.00.95 | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 3 | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 25.5 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V | |
| Rise Time | 180.7ns | |
| Drain to Source Voltage (Vdss) | 60V | |
| Fall Time (Typ) | 142.5 ns | |
| Continuous Drain Current (ID) | 60A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.014Ohm | |
| Pulsed Drain Current-Max (IDM) | 180A | |
| DS Breakdown Voltage-Min | 60V | |
| Avalanche Energy Rating (Eas) | 454 mJ | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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