[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

NVB60N06T4G Технические параметры

ON Semiconductor  NVB60N06T4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 25 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3Pins
Current - Continuous Drain (Id) @ 25℃ 60A Ta
Number of Elements 1 Element
Power Dissipation (Max) 2.4W Ta 150W Tj
Turn Off Delay Time 94.5 ns
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
HTS Code 8541.29.00.95
Terminal Form GULL WING
Свойство продукта Значение свойства
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 25.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 180.7ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 142.5 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 180A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 454 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

NVB60N06T4G Документы

NVB60N06T4G brand manufacturers: ON Semiconductor, Anli stock, NVB60N06T4G reference price.ON Semiconductor. NVB60N06T4G parameters, NVB60N06T4G Datasheet PDF and pin diagram description download.You can use the NVB60N06T4G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NVB60N06T4G pin diagram and circuit diagram and usage method of function,NVB60N06T4G electronics tutorials.You can download from the Anli.