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NVD5863NLT4G Технические параметры

ON Semiconductor  NVD5863NLT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 hours ago)
Factory Lead Time 27 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14.9A Ta 82A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta 96W Tc
Turn Off Delay Time 37.6 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Pin Count 4
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 12.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.1m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 24.4ns
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Continuous Drain Current (ID) 82A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 320 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVD5863NLT4G Документы

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