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NVMFD5877NLT1G Технические параметры

ON Semiconductor  NVMFD5877NLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A
Number of Elements 2 Elements
Turn Off Delay Time 14.5 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 39MOhm
Terminal Finish Tin (Sn)
Max Power Dissipation 3.2W
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F6
Element Configuration Dual
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 23W
Case Connection DRAIN
Turn On Delay Time 8.1 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Continuous Drain Current (ID) 17A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 74A
Avalanche Energy Rating (Eas) 10.5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.05mm
Length 6.1mm
Width 5.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVMFD5877NLT1G Документы

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