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NVMFD5877NLWFT1G Технические параметры

ON Semiconductor  NVMFD5877NLWFT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Factory Lead Time 13 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 3.2W
Terminal Form FLAT
Pin Count 8
Reference Standard AEC-Q101
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-F6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 39m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 74A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 40 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVMFD5877NLWFT1G Документы

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