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NVMFD5C470NLWFT1G Технические параметры

ON Semiconductor  NVMFD5C470NLWFT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 48 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Ta 36A Tc
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W Ta 24W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 0.0178Ohm
Pulsed Drain Current-Max (IDM) 110A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 49 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant

NVMFD5C470NLWFT1G Документы

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