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NVMFD5C672NLT1G Технические параметры

ON Semiconductor  NVMFD5C672NLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 48 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta 49A Tc
Number of Elements 2 Elements
Turn Off Delay Time 22 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F6
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 11 ns
Power - Max 3.1W Ta 45W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 793pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0168Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 146A
Avalanche Energy Rating (Eas) 66 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Standard
Height 1.1mm
RoHS Status ROHS3 Compliant

NVMFD5C672NLT1G Документы

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