Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor NVMFD5C672NLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 48 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 12A Ta 49A Tc | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 22 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-F6 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 3.1W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 11 ns | |
| Power - Max | 3.1W Ta 45W Tc | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 11.9m Ω @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 30μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 793pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 4.5V | |
| Continuous Drain Current (ID) | 11A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.0168Ohm | |
| Drain to Source Breakdown Voltage | 60V | |
| Pulsed Drain Current-Max (IDM) | 146A | |
| Avalanche Energy Rating (Eas) | 66 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 175°C | |
| FET Feature | Standard | |
| Height | 1.1mm | |
| RoHS Status | ROHS3 Compliant |