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NVMFS5113PLT1G Технические параметры

ON Semiconductor  NVMFS5113PLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10A Ta 64A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.8W Ta 150W Tc
Turn Off Delay Time 54 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
Terminal Finish Tin (Sn)
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Continuous Drain Current (ID) -10A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVMFS5113PLT1G Документы

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