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NVMFS5826NLT1G Технические параметры

ON Semiconductor  NVMFS5826NLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 38 Weeks
Surface Mount YES
Number of Pins 5Pins
Number of Elements 1 Element
Turn Off Delay Time 15 ns
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
Halogen Free Halogen Free
Rise Time 32ns
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 24 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.032Ohm
Pulsed Drain Current-Max (IDM) 130A
Input Capacitance 850pF
Avalanche Energy Rating (Eas) 20 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 24 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NVMFS5826NLT1G Документы

NVMFS5826NLT1G brand manufacturers: ON Semiconductor, Anli stock, NVMFS5826NLT1G reference price.ON Semiconductor. NVMFS5826NLT1G parameters, NVMFS5826NLT1G Datasheet PDF and pin diagram description download.You can use the NVMFS5826NLT1G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find NVMFS5826NLT1G pin diagram and circuit diagram and usage method of function,NVMFS5826NLT1G electronics tutorials.You can download from the Anli.