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NVMFS5844NLT1G Технические параметры

ON Semiconductor  NVMFS5844NLT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 22 hours ago)
Factory Lead Time 38 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11.2A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.7W Ta 107W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 12mOhm
Terminal Finish Tin (Sn)
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Pin Count 5
Reference Standard AEC-Q101
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 25ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 11.2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 61A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 247A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVMFS5844NLT1G Документы

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