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NVMFS6H800NT1G Технические параметры

ON Semiconductor  NVMFS6H800NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Current - Continuous Drain (Id) @ 25℃ 28A Ta 203A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 3.8W Ta 200W Tc
Turn Off Delay Time 97 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1Channel
Power Dissipation 3.8W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 330μA
Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 175°C
Height 1.1mm
RoHS Status RoHS Compliant

NVMFS6H800NT1G Документы

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