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ON Semiconductor NVMFS6H800NT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN, 5 Leads | |
| Current - Continuous Drain (Id) @ 25℃ | 28A Ta 203A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 3.8W Ta 200W Tc | |
| Turn Off Delay Time | 97 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Published | 2015 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Number of Channels | 1Channel | |
| Power Dissipation | 3.8W | |
| Turn On Delay Time | 25 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.1m Ω @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 330μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 5530pF @ 40V | |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 28A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 80V | |
| Max Junction Temperature (Tj) | 175°C | |
| Height | 1.1mm | |
| RoHS Status | RoHS Compliant |