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NVTFS4C25NTAG Технические параметры

ON Semiconductor  NVTFS4C25NTAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 10.1A Ta 22.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3W Ta 14.3W Tc
Turn Off Delay Time 13 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Свойство продукта Значение свойства
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-F5
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 22.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 10.1A
Drain-source On Resistance-Max 0.017Ohm
Pulsed Drain Current-Max (IDM) 90A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 11.2 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NVTFS4C25NTAG Документы

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