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ON Semiconductor NXH50C120L2C2ESG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | 26-PowerDIP Module (1.199, 47.20mm) | |
| Supplier Device Package | 26-DIP | |
| ECCN (US) | EAR99 | |
| HTS | 8541.29.00.95 | |
| Maximum Collector-Emitter Voltage (V) | 1200 | |
| Typical Collector Emitter Saturation Voltage (V) | 1.8 | |
| Maximum Gate Emitter Voltage (V) | ±20 | |
| Maximum Power Dissipation (mW) | 20(Typ) | |
| Maximum Continuous Collector Current (A) | 50 | |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 150 | |
| AEC Qualified | No | |
| Supplier Package | DIP | |
| Military | No | |
| Mounting | Through Hole | |
| Package Height | 8 | |
| Package Length | 73.2 | |
| Package Width | 40.2 | |
| PCB changed | 26 | |
| Maximum Gate Emitter Voltage | ±20.0V | |
| Package Type | DIP26 | |
| Maximum Collector Emitter Voltage | 650 V | |
| Pd - Power Dissipation | - | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 6 | |
| Manufacturer | onsemi |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | onsemi | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 50 A | |
| Base Product Number | NXH50 | |
| Mfr | onsemi | |
| Product Status | Active | |
| Packaging | Tube | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Series | - | |
| Part Status | Active | |
| Subcategory | IGBTs | |
| Pin Count | 26 | |
| Configuration | Hex | |
| Power Dissipation | - | |
| Power - Max | 20 mW | |
| Input | Three Phase Bridge Rectifier | |
| Product Type | IGBT Modules | |
| Current - Collector Cutoff (Max) | 250 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Channel Type | N | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A | |
| Continuous Collector Current | 50 | |
| IGBT Type | - | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 11.897 nF @ 20 V | |
| Product | IGBT Silicon Modules | |
| Product Category | IGBT Modules | |
| RoHS Status | RoHS Compliant |