Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NZT651 Технические параметры
ON Semiconductor NZT651 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | |
| Factory Lead Time | 45 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Number of Pins | 4Pins | |
| Weight | 188mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 1 Element | |
| hFEMin | 75 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | 60V | |
| Max Power Dissipation | 1.2W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 4A | |
| Frequency | 75MHz | |
| Base Part Number | NZT651 | |
| Element Configuration | Single | |
| Power Dissipation | 1.2W | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 75MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 60V | |
| Max Collector Current | 4A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
| Transition Frequency | 75MHz | |
| Max Breakdown Voltage | 60V | |
| Collector Base Voltage (VCBO) | 80V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 6.35mm | |
| Length | 6.35mm | |
| Width | 6.35mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ