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NZT660 Технические параметры

ON Semiconductor  NZT660 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4Pins
Weight 188mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC -60V
Max Power Dissipation 2W
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Current Rating -3A
Frequency 75MHz
Base Part Number NZT660
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Gain Bandwidth Product 75MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Transition Frequency 75MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Height 1.7mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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NZT660 Документы

NZT660 brand manufacturers: ON Semiconductor, Anli stock, NZT660 reference price.ON Semiconductor. NZT660 parameters, NZT660 Datasheet PDF and pin diagram description download.You can use the NZT660 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find NZT660 pin diagram and circuit diagram and usage method of function,NZT660 electronics tutorials.You can download from the Anli.