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P6SMB24CAT3G Технические параметры

ON Semiconductor  P6SMB24CAT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Circuit Protection Kits - TVS Diodes
Марка ON Semiconductor
Contact Plating Tin
Number of Pins 2Pins
Breakdown Voltage / V 22.8 V
Reverse Stand-off Voltage 20.5 V
Number of Elements 1 Element
RoHS Compliant
Packaging Tape and Reel
Termination SMD/SMT
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Composition Zener
Max Power Dissipation 600 W
Operating Supply Voltage 20.5 V
Polarity Bidirectional
Number of Channels 1Channel
Leakage Current 5 µA
Element Configuration Single
Power Dissipation 600 W
Свойство продукта Значение свойства
Power Line Protection No
Max Reverse Leakage Current 5 µA
Clamping Voltage 33.2 V
Peak Pulse Current 18 A
Max Surge Current 18 A
Peak Pulse Power 600 W
Direction Bidirectional
Test Current 1 mA
Reverse Breakdown Voltage 22.8 V
Max Breakdown Voltage 25.2 V
ESD Protection Yes
Number of Bidirectional Channels 1Bidirectional Channel
Min Breakdown Voltage 22.8 V
Width 3.81 mm
Height 2.41 mm
Length 4.57 mm
REACH SVHC No SVHC
Radiation Hardening No
Lead Free Lead Free

P6SMB24CAT3G Документы

  • Datasheets
P6SMB24CAT3G brand manufacturers: ON Semiconductor, Anli stock, P6SMB24CAT3G reference price.ON Semiconductor. P6SMB24CAT3G parameters, P6SMB24CAT3G Datasheet PDF and pin diagram description download.You can use the P6SMB24CAT3G Circuit Protection Kits - TVS Diodes, DSP Datesheet PDF, find P6SMB24CAT3G pin diagram and circuit diagram and usage method of function,P6SMB24CAT3G electronics tutorials.You can download from the Anli.