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- P6SMB51CAT3G
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P6SMB51CAT3G Технические параметры
ON Semiconductor P6SMB51CAT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Circuit Protection Kits - TVS Diodes | |
| Марка | ON Semiconductor | |
| Number of Pins | 2Pins | |
| Breakdown Voltage / V | 48.5 V | |
| Reverse Stand-off Voltage | 43.6 V | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Packaging | Tape and Reel | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C | |
| Composition | Zener | |
| Operating Supply Voltage | 43.6 V | |
| Polarity | Bidirectional | |
| Number of Channels | 1Channel | |
| Leakage Current | 5 µA | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Line Protection | No | |
| Max Reverse Leakage Current | 5 µA | |
| Clamping Voltage | 70.1 V | |
| Peak Pulse Current | 8.6 A | |
| Max Surge Current | 8.6 A | |
| Peak Pulse Power | 600 W | |
| Direction | Bidirectional | |
| Test Current | 1 mA | |
| Reverse Breakdown Voltage | 48.5 V | |
| ESD Protection | Yes | |
| Number of Bidirectional Channels | 1Bidirectional Channel | |
| Min Breakdown Voltage | 48.5 V | |
| Width | 3.95 mm | |
| Height | 2.28 mm | |
| Length | 4.6 mm | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
P6SMB51CAT3G Документы
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