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SBC847BDW1T1G Технические параметры

ON Semiconductor  SBC847BDW1T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 380mW
Свойство продукта Значение свойства
Terminal Form GULL WING
Frequency 100MHz
Base Part Number BC847BD
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
SBC847BDW1T1G brand manufacturers: ON Semiconductor, Anli stock, SBC847BDW1T1G reference price.ON Semiconductor. SBC847BDW1T1G parameters, SBC847BDW1T1G Datasheet PDF and pin diagram description download.You can use the SBC847BDW1T1G Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find SBC847BDW1T1G pin diagram and circuit diagram and usage method of function,SBC847BDW1T1G electronics tutorials.You can download from the Anli.