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SBR640CTT4G Технические параметры

ON Semiconductor  SBR640CTT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 40
Peak Reverse Repetitive Voltage (V) 40
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 75
Peak Forward Voltage (V) 0.9
Peak Reverse Current (uA) 100
Maximum Junction Ambient Thermal Resistance 80°C/W
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Standard Package Name TO-252
Supplier Package DPAK
Military No
Mounting Surface Mount
Package Height 2.38(Max)
Package Length 6.73(Max)
Package Width 6.22(Max)
PCB changed 2
Tab Tab
Lead Shape Gull-wing
Unit Weight 0.012381 oz
Свойство продукта Значение свойства
Factory Pack QuantityFactory Pack Quantity 2500
Manufacturer onsemi
Brand onsemi
RoHS Details
Package Tape & Reel (TR)
Base Product Number SBR640
Mfr onsemi
Product Status Active
Current - Average Rectified (Io) (per Diode) 3A
Packaging Tape and Reel
Series MBRD640CT
Part Status Unconfirmed
Type Schottky Diode
Subcategory Diodes & Rectifiers
Pin Count 3
Configuration Dual Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A
Operating Temperature - Junction -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 40 V
Product Type Schottky Diodes & Rectifiers
Diode Configuration 1 Pair Common Cathode
Repetitive Peak Reverse Voltage 40
Product Category Schottky Diodes & Rectifiers
RoHS Status Yes with exemptions

SBR640CTT4G Документы

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