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SGF23N60UFTU Технические параметры

ON Semiconductor  SGF23N60UFTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Weight 6.962g
Transistor Element Material SILICON
Number of Elements 1 Element
Test Conditions 300V, 12A, 23 Ω, 15V
Collector-Emitter Saturation Voltage 2.1V
Collector-Emitter Breakdown Voltage 600V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Voltage - Rated DC 600V
Max Power Dissipation 75W
Current Rating 12A
Base Part Number SG*23N60
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power Dissipation 75W
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 23A
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/60ns
Switching Energy 115μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 250ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SGF23N60UFTU Документы

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