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SGH10N60RUFDTU Технические параметры

ON Semiconductor  SGH10N60RUFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.2V
Number of Elements 1 Element
Test Conditions 300V, 10A, 20 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Свойство продукта Значение свойства
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 75W
Current Rating 10A
Base Part Number SG*10N60
Element Configuration Single
Power Dissipation 75W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 60ns
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Turn Off Time-Nom (toff) 284 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 15ns/36ns
Switching Energy 141μJ (on), 215μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SGH10N60RUFDTU Документы

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