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SGH30N60RUFDTU Технические параметры

ON Semiconductor  SGH30N60RUFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.2V
Number of Elements 1 Element
Test Conditions 300V, 30A, 7 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 235W
Current Rating 30A
Element Configuration Single
Power Dissipation 235W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 48A
Reverse Recovery Time 95ns
Turn On Time 101 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 30A
Turn Off Time-Nom (toff) 341 ns
Gate Charge 85nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/54ns
Switching Energy 919μJ (on), 814μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

SGH30N60RUFDTU Документы

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