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SGH80N60UFDTU Технические параметры

ON Semiconductor  SGH80N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3Pins
Weight 6.401g
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Test Conditions 300V, 40A, 5 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Voltage - Rated DC 100V
Max Power Dissipation 195W
Свойство продукта Значение свойства
Current Rating 28A
Element Configuration Single
Power Dissipation 195W
Input Type Standard
Rise Time 50ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 95ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Gate Charge 175nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 23ns/90ns
Switching Energy 570μJ (on), 590μJ (off)
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

SGH80N60UFDTU Документы

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