[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

SGP10N60RUFDTU Технические параметры

ON Semiconductor  SGP10N60RUFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.2V
Number of Elements 1 Element
Test Conditions 300V, 10A, 20 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 208W
Свойство продукта Значение свойства
Current Rating 10A
Base Part Number SG*10N60
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power Dissipation 75W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Max Breakdown Voltage 600V
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Turn Off Time-Nom (toff) 284 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 15ns/36ns
Switching Energy 141μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Fall Time-Max (tf) 220ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

SGP10N60RUFDTU Документы

SGP10N60RUFDTU brand manufacturers: ON Semiconductor, Anli stock, SGP10N60RUFDTU reference price.ON Semiconductor. SGP10N60RUFDTU parameters, SGP10N60RUFDTU Datasheet PDF and pin diagram description download.You can use the SGP10N60RUFDTU Transistors - IGBTs - Single, DSP Datesheet PDF, find SGP10N60RUFDTU pin diagram and circuit diagram and usage method of function,SGP10N60RUFDTU electronics tutorials.You can download from the Anli.