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SGP13N60UFDTU Технические параметры

ON Semiconductor  SGP13N60UFDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1 Element
Test Conditions 300V, 6.5A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Свойство продукта Значение свойства
Max Power Dissipation 60W
Current Rating 6.5A
Base Part Number SG*13N60
JESD-30 Code R-PSFM-T3
Element Configuration Single
Power Dissipation 60W
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 13A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 6.5A
Turn Off Time-Nom (toff) 253 ns
Gate Charge 25nC
Current - Collector Pulsed (Icm) 52A
Td (on/off) @ 25°C 20ns/70ns
Switching Energy 85μJ (on), 95μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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SGP13N60UFDTU Документы

SGP13N60UFDTU brand manufacturers: ON Semiconductor, Anli stock, SGP13N60UFDTU reference price.ON Semiconductor. SGP13N60UFDTU parameters, SGP13N60UFDTU Datasheet PDF and pin diagram description download.You can use the SGP13N60UFDTU Transistors - IGBTs - Single, DSP Datesheet PDF, find SGP13N60UFDTU pin diagram and circuit diagram and usage method of function,SGP13N60UFDTU electronics tutorials.You can download from the Anli.