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SMUN5211DW1T1G Технические параметры

ON Semiconductor  SMUN5211DW1T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 35
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 187mW
Terminal Form GULL WING
Base Part Number MUN51**DW1T
Pin Count 6
Reference Standard AEC-Q101
Polarity NPN
Element Configuration Dual
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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