Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- /
- SMUN5214DW1T1G
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SMUN5214DW1T1G Технические параметры
ON Semiconductor SMUN5214DW1T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) | |
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 80 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 4.7 | |
| Max Power Dissipation | 187mW | |
| Terminal Form | GULL WING | |
| Base Part Number | MUN52**DW1T |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Reference Standard | AEC-Q101 | |
| Max Output Current | 100mA | |
| Operating Supply Voltage | 50V | |
| Polarity | NPN | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Max Frequency | 10kHz | |
| Max Breakdown Voltage | 50V | |
| Collector Base Voltage (VCBO) | 50V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Resistor - Base (R1) | 10k Ω | |
| Resistor - Emitter Base (R2) | 47k Ω | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ