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SS8550DTA Технические параметры
ON Semiconductor SS8550DTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) | |
| Factory Lead Time | 6 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Weight | 240mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Number of Elements | 1 Element | |
| hFEMin | 85 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Box (TB) | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | -25V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 1W | |
| Terminal Position | BOTTOM | |
| Current Rating | -1.5A | |
| Frequency | 200MHz | |
| Base Part Number | SS8550 | |
| Element Configuration | Single | |
| Power Dissipation | 1W | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 200MHz | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 1.5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA | |
| Transition Frequency | 200MHz | |
| Max Breakdown Voltage | 25V | |
| Collector Base Voltage (VCBO) | -40V | |
| Emitter Base Voltage (VEBO) | -6V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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