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TF262TH-4-TL-H Технические параметры
ON Semiconductor TF262TH-4-TL-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LIFETIME (Last Updated: 2 days ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-SMD, Flat Lead | |
| Number of Pins | 3Pins | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 100mW | |
| Element Configuration | Single | |
| Power Dissipation | 100mW | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5pF @ 2V | |
| Drain to Source Voltage (Vdss) | -20V | |
| Continuous Drain Current (ID) | 1mA | |
| Gate to Source Voltage (Vgs) | -20V | |
| Drain to Source Breakdown Voltage | -20V | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 140μA @ 2V | |
| Voltage - Cutoff (VGS off) @ Id | 200mV @ 1μA | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
TF262TH-4-TL-H Документы
- ReachStatementON-Semiconductor-company-79.pdf
- PCN Obsolescence/ EOLEOL 21/Apr/2016
- DatasheetsTF262TH
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