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BPX38-4-Z Технические параметры
OSRAM Opto Semiconductors, Inc. BPX38-4-Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Material | Silicon | |
| Maximum Operating Temperature (°C) | 125 | |
| Mounting | Through Hole | |
| Package Height | 5.5(Max) | |
| PCB changed | 3 | |
| Standard Package Name | TO-206-AA | |
| Supplier Package | TO-18 | |
| Lead Shape | Through Hole | |
| Minimum Operating Temperature (°C) | -40 | |
| Fabrication Technology | NPN Transistor | |
| Maximum Power Dissipation (mW) | 220 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 | |
| Maximum Collector-Emitter Voltage (V) | 50 | |
| Maximum Dark Current (nA) | 100 | |
| Maximum Collector Current (mA) | 50 | |
| Maximum Light Current (uA) | 900 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Fall Time (ns) | 15000 | |
| Maximum Rise Time (ns) | 15000 | |
| Peak Wavelength (nm) | 880 | |
| Viewing Orientation | Top View | |
| Half Intensity Angle Degrees (°) | 80 | |
| Number of Channels per Chip | 1 | |
| Lens Shape Type | Domed | |
| Phototransistor Type | Phototransistor | |
| PPAP | No | |
| Automotive | No | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant | |
| Part Status | Obsolete | |
| Type | Chip | |
| Pin Count | 3 | |
| Polarity | NPN | |
| Diameter | 5.6(Max) |
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