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LPT80A-Z Технические параметры
OSRAM Opto Semiconductors, Inc. LPT80A-Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Material | Silicon | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.49.70.40 | |
| Automotive | No | |
| PPAP | No | |
| Phototransistor Type | Phototransistor | |
| Lens Shape Type | Domed | |
| Number of Channels per Chip | 1 | |
| Half Intensity Angle Degrees (°) | 70 | |
| Viewing Orientation | Side View | |
| Peak Wavelength (nm) | 850 | |
| Maximum Rise Time (ns) | 10000 | |
| Maximum Fall Time (ns) | 10000 | |
| Maximum Light Current (uA) | 3200 | |
| Maximum Collector Current (mA) | 50 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Dark Current (nA) | 3 | |
| Maximum Emitter-Collector Voltage (V) | 7 | |
| Maximum Collector-Emitter Voltage (V) | 30 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15 | |
| Maximum Power Dissipation (mW) | 100 | |
| Fabrication Technology | NPN Transistor | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Mounting | Through Hole | |
| Package Height | 5.84(Max) | |
| Package Width | 2.54(Max) | |
| Package Length | 4.57(Max) | |
| PCB changed | 2 | |
| RoHS | Compliant | |
| Part Status | LTB | |
| Type | IR Chip | |
| Pin Count | 2 | |
| Polarity | NPN |
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