Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
Q65111A4760 Технические параметры
OSRAM Opto Semiconductors, Inc. Q65111A4760 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Phototransistors | |
| Марка | ||
| Material | Silicon | |
| EU RoHS | Compliant | |
| HTS | 8541.49.70.80 | |
| Phototransistor Type | Phototransistor | |
| Lens Shape Type | Domed | |
| Number of Channels per Chip | 1 | |
| Half Intensity Angle Degrees (°) | 25 | |
| Viewing Orientation | Top View | |
| Peak Wavelength (nm) | 880 | |
| Maximum Rise Time (ns) | 10000 | |
| Maximum Fall Time (ns) | 10000 | |
| Maximum Light Current (uA) | 2200 | |
| Maximum Collector Current (mA) | 50 | |
| Maximum Dark Current (nA) | 50 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Emitter-Collector Voltage (V) | 7 | |
| Maximum Collector-Emitter Voltage (V) | 35 | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.14 | |
| Maximum Power Dissipation (mW) | 200 | |
| Fabrication Technology | NPN Transistor | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 100 | |
| Mounting | Through Hole | |
| Package Height | 9(Max) | |
| PCB changed | 2 | |
| Supplier Package | T-1 3/4 | |
| Part Status | Unconfirmed | |
| Pin Count | 2 | |
| Polarity | NPN | |
| Diameter | 5.9(Max) |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ