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DMA506010R Технические параметры
Panasonic Electronic Components DMA506010R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, Flat Leads | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| hFEMin | 210 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Max Power Dissipation | 300mW | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | DMA50601 | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power - Max | 300mW | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 150MHz | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA 10V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA | |
| Transition Frequency | 150MHz | |
| Max Breakdown Voltage | 50V | |
| Emitter Base Voltage (VEBO) | -7V | |
| Continuous Collector Current | -100mA | |
| Height | 600μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | RoHS Compliant |
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