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DMG563010R Технические параметры
Panasonic Electronic Components DMG563010R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD (5 Leads), Flat Lead | |
| Number of Pins | 5Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 2 Elements | |
| Packaging | Tape & Reel (TR) | |
| Published | 2010 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Additional Feature | BUILT IN BIAS RESISITANCE RATIO 1 | |
| Max Power Dissipation | 150mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | DMG56301 | |
| Polarity | NPN, PNP | |
| Element Configuration | Dual | |
| Transistor Application | SWITCHING | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 10k Ω | |
| Continuous Collector Current | -100mA | |
| Resistor - Emitter Base (R2) | 10k Ω | |
| REACH SVHC | Unknown | |
| RoHS Status | RoHS Compliant |
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