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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DRA3114Y0L
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DRA3114Y0L Технические параметры
Panasonic Electronic Components DRA3114Y0L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 4.7 | |
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 100mW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | DRA3114 | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Transistor Application | SWITCHING | |
| Transistor Type | PNP - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | -50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 10 k Ω | |
| Continuous Collector Current | -100mA | |
| Resistor - Emitter Base (R2) | 47 k Ω | |
| Height | 470μm | |
| Length | 1.2mm | |
| Width | 800μm | |
| RoHS Status | RoHS Compliant |
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