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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DRA5114E0L
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DRA5114E0L Технические параметры
Panasonic Electronic Components DRA5114E0L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-85 | |
| Number of Pins | 85Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 1 | |
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | DRA5114 | |
| JESD-30 Code | R-PDSO-F3 | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Transistor Application | SWITCHING | |
| Transistor Type | PNP - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | -50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500μA, 10mA | |
| Max Breakdown Voltage | 50V | |
| Resistor - Base (R1) | 10 k Ω | |
| Continuous Collector Current | -100mA | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| Height | 800μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
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