Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FG6943010R Технические параметры
Panasonic Electronic Components FG6943010R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Turn Off Delay Time | 100 ns | |
| Number of Elements | 2 Elements | |
| Published | 2011 | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -40°C~85°C TJ | |
| JESD-609 Code | e6 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 125mW | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | FG694301 | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 100 ns | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 30V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 100mA | |
| Threshold Voltage | 1V | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 0.1A | |
| Drain to Source Breakdown Voltage | -30V | |
| Input Capacitance | 12pF | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Drain to Source Resistance | 2Ohm | |
| Nominal Vgs | 1 V | |
| Height | 500μm | |
| Length | 1.6mm | |
| Width | 1.2mm | |
| RoHS Status | RoHS Compliant | |
| REACH SVHC | No SVHC |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ