Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MTM231232LBF Технические параметры
Panasonic Electronic Components MTM231232LBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Number of Pins | 3Pins | |
| Weight | 6.208546mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V 4.5V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500mW Ta | |
| Turn Off Delay Time | 120 ns | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | MTM231232 | |
| Number of Channels | 1Channel | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 25 ns | |
| FET Type | P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 1A, 4V | |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V | |
| Rise Time | 25ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±10V | |
| Fall Time (Typ) | 70 ns | |
| Continuous Drain Current (ID) | -3A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain Current-Max (Abs) (ID) | 3A | |
| Drain-source On Resistance-Max | 0.055Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| Height | 800μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | RoHS Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ