Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- /
- NP0G3A300A
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NP0G3A300A Технические параметры
Panasonic Electronic Components NP0G3A300A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-963 | |
| Supplier Device Package | SSSMini6-F1 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Current-Collector (Ic) (Max) | 80mA | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 125mW | |
| Current Rating | 80mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | NP0G3A3 | |
| Power - Max | 125mW | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 250mV | |
| Max Collector Current | 80mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 150MHz 80MHz | |
| Resistor - Base (R1) | 47kOhms | |
| Resistor - Emitter Base (R2) | 47kOhms | |
| RoHS Status | RoHS Compliant |
NP0G3A300A Документы
- DatasheetsNP0G3A3 Series
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ