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UNR421300A Технические параметры

Panasonic Electronic Components  UNR421300A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-SSIP
Supplier Device Package NS-B1
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 50V
Max Power Dissipation 300mW
Current Rating 100mA
Свойство продукта Значение свойства
Power - Max 300mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

UNR421300A Документы

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