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UNR421900A Технические параметры

Panasonic Electronic Components  UNR421900A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Through Hole
Package / Case 3-SSIP
Supplier Device Package NS-B1
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Box (TB)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Power - Max 300mW
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 150MHz
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms

UNR421900A Документы

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